60T65 PES
High Speed Field stop Trench IGBT Second Generation
Transistor
Igbt
Package
TO247
Voltage
650V-60A-20V
Manufacturer
MagnaChip Semiconductor
Number Of Pins
3
Product Description
Maximum collector-emitter voltage: 650V
Maximum collector current: 60A
Maximum gate-emitter voltage: 20V
Maximum junction temperature: 175°C
Total gate charge: 120nC
Rise time: 20ns
Fall time: 30ns
Applications
Power supply, Inverter, PFC, Motor drive, and Switching applications.