BT40T60
N-Channel IGBT (Integrated Gate-Commutated Thyristor) Transistor
Transistor
Igbt
Package
TO3P
Voltage
600V-80A-280W
Manufacturer
Huajing Microelectronics
Number Of Pins
3
Product Description
Maximum power dissipation: 280W
Maximum collector-emitter voltage: 600V
Maximum gate-emitter voltage: 20V
Maximum collector current: 80A
Collector-emitter saturation voltage: 1.8V
Maximum gate-emitter threshold voltage: 7V
Maximum junction temperature: 150°C
Rise time: 50ns
Collector capacity: 170pF
Total gate charge: 165nC