CLA50E1200HB, Transistor

CLA50E1200HB

High-efficiency thyristor/SCR (Silicon-Controlled Rectifier)

Transistor

Package

TO247

Voltage

1200V-45A

Manufacturer

IXYS SEMICONDUCTOR

Number Of Pins

3

Product Description

  • Maximum repetitive peak and off-state voltage (VDRM): 1200V

  • Maximum average on-state current (IT(AVR)): 50 A

  • Maximum RMS on-state current (IT(RMS)): 79 A

  • Non-repetitive surge peak on-state current (ITSM): 700 A

  • Critical rate of rise of off-state voltage (dV/dt): 1000 V/μs

  • Maximum gate trigger current: 80mA

  • Maximum gate trigger voltage: 1.6V

  • Maximum holding current: 100mA

  • Operating temperature range: -40°C to 150°C

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