GT30J127
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Transistor
Igbt
Package
TO220
Voltage
600 V- 200 A- 25 V
Manufacturer
TOSHIBA
Number Of Pins
3
Product Description
Maximum collector-emitter voltage: 600V
Maximum collector current: 200A
Maximum gate-emitter voltage: 25V
Maximum junction temperature: 150°C
Total gate charge: 120nC
Rise time: 35ns
Applications
Plasma display panels, motor drivers, uninterruptible power supply (UPS) systems, IH cookers, strobe flashes, etc.