HY3210
N-Channel Enhancement Mode MOSFET
Transistor
Mosfet
Package
TO220
Voltage
100V-120A
Manufacturer
HUAYI MICROELECTRONICS
Number Of Pins
3
Product Description
Maximum power dissipation: 237 W
Maximum drain-source voltage: 100 V
Maximum gate-source voltage: 25 V
Maximum gate-threshold voltage: 4 V
Maximum drain current: 120 A
Maximum junction temperature: 175 °C
Total gate charge: 120 nC
Rise time: 35 ns
Output capacitance: 902 pF
Maximum drain-source on-state resistance: 0.0085 Ohm
Applications
Power Switching application
Uninterruptible Power Supply