HY3210, Transistor

HY3210

N-Channel Enhancement Mode MOSFET

Transistor
Mosfet

Package

TO220

Voltage

100V-120A

Manufacturer

HUAYI MICROELECTRONICS

Number Of Pins

3

Product Description

  • Maximum power dissipation: 237 W

  • Maximum drain-source voltage: 100 V

  • Maximum gate-source voltage: 25 V

  • Maximum gate-threshold voltage: 4 V

  • Maximum drain current: 120 A

  • Maximum junction temperature: 175 °C

  • Total gate charge: 120 nC

  • Rise time: 35 ns

  • Output capacitance: 902 pF

  • Maximum drain-source on-state resistance: 0.0085 Ohm

Applications

  • Power Switching application

  • Uninterruptible Power Supply

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