IRFB4229, Transistor

IRFB4229

N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)

Transistor
Mosfet

Package

TO220

Voltage

250V-46A-330W

Manufacturer

Infineon Technologies

Number Of Pins

3

Product Description

  • Maximum Power Dissipation: 330 W

  • Maximum Drain-Source Voltage (Vds): 250 V

  • Maximum Gate-Source Voltage (Vgs): 30 V

  • Maximum Gate-Threshold Voltage (Vgs(th)): 5 V

  • Maximum Drain Current (Id): 46 A

  • Maximum Junction Temperature (Tj): 175 °C

  • Total Gate Charge (Qg): 72 nC

  • Rise Time (tr): 31 nS

  • Output Capacitance (Coss): 4560 pF

  • Maximum Drain-Source On-State Resistance (Rds): 0.046 Ohm

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