IRFB4229
N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Transistor
Mosfet
Package
TO220
Voltage
250V-46A-330W
Manufacturer
Infineon Technologies
Number Of Pins
3
Product Description
Maximum Power Dissipation: 330 W
Maximum Drain-Source Voltage (Vds): 250 V
Maximum Gate-Source Voltage (Vgs): 30 V
Maximum Gate-Threshold Voltage (Vgs(th)): 5 V
Maximum Drain Current (Id): 46 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 72 nC
Rise Time (tr): 31 nS
Output Capacitance (Coss): 4560 pF
Maximum Drain-Source On-State Resistance (Rds): 0.046 Ohm