MGD623S, Transistor

MGD623S

N-Channel IGBT (Integrated Gate-Commutated Thyristor)

Transistor
Igbt

Package

TO3P

Voltage

600V-50A-150W

Manufacturer

SANKEN ELECTRIC

Number Of Pins

3

Product Description

The MGD623S is 600 V trench IGBT. Sanken original trench structure decreases gate capacitance and achieves high speed switching and switching loss reduction. Thus, the IGBT can improve the efficiency of circuit

Application

  • Current Resonance Inverter Switching

  • Induction Heating Cooking

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